CMOS based TX/RX switch

ABSTRACT

A novel and useful radio frequency (RF) front end module (FEM) circuit that provides high linearity and power efficiency and meets the requirements of modern wireless communication standards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth, ZigBee, etc. The configuration of the FEM circuit permits the use of common, relatively low cost semiconductor fabrication techniques such as standard CMOS processes. The FEM circuit includes a power amplifier made up of one or more sub-amplifiers having high and low power circuits and whose outputs are combined to yield the total desired power gain. An integrated multi-tap transformer having primary and secondary windings arranged in a novel configuration provide efficient power combining and transfer to the antenna of the power generated by the individual sub-amplifiers.

REFERENCE TO PRIORITY APPLICATIONS

This application claims priority to U.S. Application Ser. No.61/704,510, filed Sep. 23, 2012, entitled “An Integrated Transformer,”U.S. Application Ser. No. 61/705,150, filed Sep. 25, 2012, entitled “AMethod and System for Noise Reduction in Wireless Communication,” U.S.Application Ser. No. 61/720,001, filed Oct. 30, 2012, entitled “Systemand Method for Radio Frequency Signal Amplification,” U.S. ApplicationSer. No. 61/726,699, filed Nov. 15, 2012, entitled “DC DC Converter withFast Output Voltage Transitions,” U.S. Application Ser. No. 61/726,717,filed Nov. 15, 2012, entitled “High-Efficiency Envelop Tracking Methodand System Utilizing DC-DC Converter With Fast Output VoltageTransitions,” U.S. Application Ser. No. 61/727,120, filed Nov. 16, 2012,entitled “A Method and Device for Self Aligned PA and LNA VSWR Out/InImprovement, Dynamically Adjust to Antenna,” U.S. Application Ser. No.61/727,121, filed Nov. 16, 2012, entitled “A Method and Device for SelfAligned Linearity Driven LNA Improvement,” all of which are incorporatedherein by reference in their entirety.

FIELD OF THE INVENTION

The present invention relates to the field of radio frequency (RF)circuits, and more particularly relates to an RF front end module (FEM)circuit having a high linearity and efficient power amplifier.

BACKGROUND OF THE INVENTION

Currently, wireless communications systems find application in manycontexts involving the transfer of information transfer from one pointto another, and there exists a wide range of modalities suited to meetthe particular needs of each. These systems include cellular telephonesand two-way radios for distant voice communications, as well asshorter-range data networks for computer systems, among many others.Generally, wireless communications involve a radio frequency (RF)carrier signal that is modulated to represent data and the modulation,transmission, receipt and demodulation of the signal conforming to a setof standards. For wireless data networks, example standards includeWireless LAN (IEEE 802.11), Bluetooth (IEEE 802.15.1), and ZigBee (IEEE802.15.4), which are generally time domain duplex systems where abidirectional link is emulated on a time divided communications channel.

A fundamental component of a wireless communications system is thetransceiver which includes the transmitter and receiver circuitry. Thetransceiver, with its digital baseband subsystem, encodes the digitaldata to a baseband signal and modulates the baseband signal with an RFcarrier signal. The modulation utilized for WLAN includes orthogonalfrequency division multiplexing (OFDM), quadrature phase shift keying(QPSK) and quadrature amplitude modulation (16 QAM, 64 QAM); for WLANincludes GFSK and 4/8-DQPSK; and for Zigbee includes BPSK and OQPSK (orMSK).

Upon receipt of the signal from the antenna, the transceiverdownconverts the RF signal, demodulates the baseband signal and decodesthe digital data represented by the baseband signal. The antennaconnected to the transceiver converts the electrical signal toelectromagnetic waves, and vice versa. Depending upon the particularconfiguration, the transceiver may include a dedicated transmit (TX)line and a dedicated receive (RX) line or the transceiver may have acombined transmit/receive line. In the case of separate TX and RX lines,the transmit line and the receive line are typically tied to a singleantenna, particularly for low-cost and/or small-size applications.

The circuitry between the transceiver and the antenna is commonlyreferred to as the front end module (FEM). The FEM includes an RF poweramplifier (PA) which generates output transmit signals by amplifyingweaker input signals in wireless devices, such as cellular telephonehandsets. Many of these communication devices are configured to operatein different frequency bands for different communication systems. Forexample, third generation (3G) cellular communication systems, 4Gcellular (LTE) systems, 802.11 WLAN systems, etc.

It is thus desirable to have a front end module capable of meeting theperformance requirements of modern wireless standards such as 802.11, 3Gand 4G cellular systems while reducing manufacturing complexities, sizeand cost.

SUMMARY OF THE INVENTION

The present invention is a novel and useful radio frequency (RF) frontend module (FEM) circuit that provides high linearity and powerefficiency and meets the requirements of modern wireless communicationstandards such as 802.11 WLAN, 3G and 4G cellular standards, Bluetooth,ZigBee, etc. The configuration of the FEM circuit permits the use ofcommon, relatively low cost semiconductor fabrication techniques such asstandard CMOS processes. The FEM circuit includes a dual mode poweramplifier that is made up of one or more sub-amplifiers whose outputsare combined to yield the total desired power gain. A multi-taptransformer having primary and secondary windings arranged in a novelconfiguration provide efficient power combining and transfer to theantenna of the power generated by the individual sub-amplifiers.

There is thus provided in accordance with the invention, a semiconductorantenna switch, comprising a first antenna port for coupling to a firstantenna, a second antenna port for coupling to a second antenna, atransmit/receive port for coupling to either said first antenna or saidsecond antenna, a matching network coupled to said transmit/receiveport, a first switch coupled in series between said first antenna portand said matching network, and a second switch coupled in series betweensaid second antenna port and said matching network.

There is also provided in accordance with the invention, a semiconductorantenna switch, comprising a first antenna port for coupling to a firstantenna, a second antenna port for coupling to a second antenna, atransmit/receive port for coupling a transmit RF signal to and a receiveRF signal from either said first antenna or said second antenna, a firstfield effect transistor (FET) switch having source, drain and gateterminals, the drain terminal coupled to said first antenna port, thesource coupled to said transmit/receive port, the gate terminaloperative to receive a first enable signal for controlling said firstFET switch, and a second field effect transistor (FET) switch havingsource, drain and gate terminals, the drain terminal coupled to saidsecond antenna port, the source coupled to said transmit/receive port,the gate terminal operative to receive a second enable signal forcontrolling said second FET switch.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention is herein described, by way of example only, withreference to the accompanying drawings, wherein:

FIG. 1 is a block diagram illustrating an example dual-band multi-chipfront end module (FEM) constructed in accordance with the presentinvention;

FIG. 2 is a block diagram illustrating an example single chip FEMcircuit constructed in accordance with the present invention;

FIG. 3 is a block diagram illustrating an example DC-DC converterconstructed in accordance with the present invention;

FIG. 4 is a block diagram illustrating an example RX path portion of theFEM circuit constructed in accordance with the present invention;

FIG. 5 is a block diagram illustrating a first example TX path portionof the FEM circuit;

FIG. 6 is a block diagram illustrating a second example TX path portionof the FEM circuit;

FIG. 7 is a block diagram illustrating a third example TX path portionof the FEM circuit;

FIG. 8 is a block diagram illustrating a fourth example TX path portionof the FEM circuit;

FIG. 9 is a block diagram illustrating a fifth example TX path portionof the FEM circuit;

FIG. 10 is a block diagram illustrating a sixth example TX path portionof the FEM circuit;

FIG. 11 is a block diagram illustrating the low and high portions of thepower amplifier circuit in more detail;

FIG. 12A is a schematic diagram illustrating a first exampledifferential PA circuit;

FIG. 12B is a schematic diagram illustrating the first exampledifferential PA circuit with the transformer connection shown in moredetail;

FIG. 13A is a schematic diagram illustrating a second exampledifferential PA circuit;

FIG. 13B is a schematic diagram illustrating the second exampledifferential PA circuit with the transformer connection shown in moredetail;

FIG. 14 is a schematic diagram illustrating a third example differentialPA circuit;

FIG. 15 is a layout diagram illustrating a first example integratedtransformer for use with the power amplifier of the present invention;

FIG. 16 is a layout diagram illustrating a second example integratedtransformer for use with the power amplifier of the present invention;

FIG. 17 is a layout diagram illustrating a third example integratedtransformer for use with the power amplifier of the present invention;

FIG. 18 is a layout diagram illustrating a fourth example integratedtransformer for use with the power amplifier of the present invention;

FIG. 19A is a layout diagram illustrating a fifth example integratedtransformer for use with the power amplifier of the present invention;

FIG. 19B is a layout diagram illustrating a sixth example integratedtransformer for use with the power amplifier of the present invention;

FIG. 19C is a layout diagram illustrating a seventh example integratedtransformer for use with the power amplifier of the present invention;

FIG. 20 is a layout diagram illustrating an eighth example integratedtransformer for use with the power amplifier of the present invention;

FIG. 21 is a layout diagram illustrating a ninth example integratedtransformer for use with the power amplifier of the present invention;

FIG. 22 is a layout diagram illustrating a tenth example integratedtransformer for use with the power amplifier of the present invention;

FIG. 23 is a layout diagram illustrating an eleventh example integratedtransformer for use with the power amplifier of the present invention;

FIG. 24 is a block diagram illustrating a seventh example TX pathportion of the FEM circuit;

FIG. 25 is a block diagram illustrating an eighth example TX pathportion of the FEM circuit;

FIG. 26A is a high level system block diagram illustrating an exampleDC-DC converter of the present invention;

FIG. 26B is a high level block diagram illustrating an examplesynchronous DC-DC buck converter of the present invention;

FIG. 27 is a block diagram illustrating an example DC-DC converter ofthe present invention incorporating a trim cell;

FIG. 28 is a diagram illustrating the output voltage of the DC-DCconverter circuit;

FIG. 29 is a diagram illustrating the output voltage of the DC-DCconverter circuit for a rising edge;

FIG. 30 is a diagram illustrating the output voltage of the DC-DCconverter circuit for a falling edge;

FIG. 31 is a block diagram illustrating an ninth example TX path portionof the FEM circuit;

FIG. 32 is a block diagram illustrating an example DC-DC converter ofthe present invention incorporating multiple trim cells;

FIG. 33 is a diagram illustrating the output voltage of the DC-DCconverter circuit for an RF input;

FIG. 34 is a diagram illustrating the output voltage of the DC-DCconverter circuit for an RF input in more detail;

FIG. 35 is a schematic diagram illustrating a first example TX/RXswitch;

FIG. 36 is a schematic diagram illustrating a second example TX/RXswitch;

FIG. 37 is a schematic diagram illustrating an example antenna RFswitch;

FIG. 38 is a graph illustrating the power added efficiency (PAE) as afunction of output power;

FIG. 39 is a graph illustrating the output power as a function of inputpower;

FIG. 40 is a graph illustrating the AM2AM and AM2PM response of thepower amplifier circuit;

FIG. 41 is a graph illustrating the linearization achieved by the poweramplifier circuit of the present invention;

FIG. 42 is a graph illustrating the RF signal before and after poweramplifier backoff dynamic backoff working regions;

FIG. 43 is a graph illustrating the spectrum of the power amplifier forQAM64;

FIG. 44 is a graph illustrating the time domain RF OFDM signal beforeand after dynamic backoff for QAM64;

FIG. 45 is a graph illustrating the receive and transmit constellationfor QAM64;

FIG. 46 is a graph illustrating the spectrum of the power amplifier forQAM256;

FIG. 47 is a graph illustrating the time domain RF OFDM signal beforeand after dynamic backoff for QAM256;

FIG. 48 is a graph illustrating the receive and transmit constellationfor QAM256; and

FIG. 49 is a high level block diagram illustrating an example wirelessdevice incorporating the FEM circuit of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

RF circuitry such as the transceiver is typically fabricated asintegrated circuits typically using complementary metal-oxidesemiconductor (CMOS) technology due to the miniature device size andlower cost. Small geometry CMOS devices have reduced current draw andrequire lower battery voltages thus being suitable for portableapplications that have substantial power consumption limitations.Wireless communication links must be reliable and have high datathroughput over wide distances which necessitate higher power levels atthe antenna output. For instance, the aforementioned Wireless LAN andBluetooth typically require power levels of 20 dBm (i.e. 100 mW) ormore.

Higher power output, however, requires higher current and voltage levelsin the RF circuitry. Many CMOS devices are currently produced with a0.18-micron process with advanced systems utilizing 130 nm, 90 nm, 65nm, and 45 nm processes. The resulting integrated circuits haveoperating voltages in the range of 1.8 V to lower than 1.2 V because ofthe reduced break down voltages of the semiconductor devices therein.Power levels of +20 dBm at 1.8 V have been difficult to achieveparticularly for signals having envelope variations which is the casewith OFDM, QPSK, QAM, etc. Increasing power requirements typically leadsto decreased efficiency because of a greater proportion of power beinglost as heat with subsequent decreased battery life. In addition, theimpedance is lowered for the same power level with increased current.Considering that most RF circuits are designed to have 50 Ohm impedancethe design of matching circuits for decreased impedance is alsoproblematic due to increased power losses.

Conventional transceivers for cellular, WLAN, Bluetooth, ZigBee, etc.typically do not generate sufficient power or have sufficient RXsensitivity necessary for reliable communications in many scenarios.Current integrated circuit transceiver devices have transmit powerlevels of below 0 dBm, though there are some devices that have powerlevels of 10 or 20 dBm, which is still less than the desired 20-25 dBm.Accordingly, additional conditioning of the RF signal is necessary.

The circuitry between the transceiver and the antenna is commonlyreferred to as the front end module or FEM. The FEM includes a poweramplifier for increased transmission power and a low noise amplifier(LNA) for increased reception sensitivity. Various filter circuits suchas band pass filters may also be included to provide a cleantransmission signal at the antenna and to protect the receptioncircuitry from external blocking signals reaching the antenna. The FEMalso includes an RF switch to rapidly switch between receive andtransmit functions and to prevent interference during the transitionsbetween transmission and reception. The RF switch can be controlled by ageneral purpose input/output line of the transceiver and/or via acontrol protocol agreed upon a priori. The RF switch is understood to bea single pole, double throw switch connecting a single antenna to eitherthe input of the low noise amplifier or the output of the poweramplifier. Transceivers with a shared transmit and receive line such asthose used in connection with Bluetooth and ZigBee systems generallyinclude a second RF switch at the input of the power amplifier and theoutput of the low noise amplifier for the proper control of transmit andreceive lines at the transceiver end. The second RF switch, whichenhances TX/RX isolation, can be controlled by the same general purposeinput/output line of the transceiver that controls the first RF switch.The power amplifier may also be turned on or off by an enable outputfrom the transceiver. The enable line may have varying voltages tocontrol gain or setting the power amplifier bias current.

Interrelated performance, fabrication, and cost issues have necessitatedthe fabrication of the RF switch on a different substrate than thesubstrate of the power amplifier and the low noise amplifier. Poweramplifiers are typically fabricated on a gallium arsenide (GaAs)substrate which provides high breakdown voltages and reliability. Othersubstrates such as silicon germanium (SiGe) may also be utilized. Inaddition, the power amplifier can utilize hetero-junction bipolartransistors (HBT), metal-semiconductor field effect transistors (MESFET)or high electron mobility transistors (HEMT) with the HBT being theleast costly to fabricate. The low noise amplifier may also befabricated on a GaAs substrate with HBT transistors. Due to highinsertion loss or low isolation, however, an RF switch using HBTtransistors suffers from poor performance characteristics.

One solution to the above issues comprises using a multi-dieconfiguration in which the power amplifier and the low noise amplifierare fabricated on one die using HBT transistors while the RF switch isfabricated on another die using, e.g., HEMT transistors. Both of thedies are then encapsulated in a single package. The added costsassociated with the GaAs substrate as compared to conventional siliconsubstrates and the complex packaging process further elevates the costof the front end module circuit. Another solution is directed to acomposite GaAs substrate having both HBT and HEMT transistors for thepower amplifier and the low noise amplifier and the RF switch. Suchintegrated circuits are, however, costly to manufacture. Alternatively,a silicon substrate can be used for the low noise amplifier, the poweramplifier and the RF switch. Because of poor isolation associated withsilicon substrates, however, higher cost solutions such as silicon oninsulator (SOI) may be used. These integrated circuits typically requirea negative voltage generator, which results in a larger die for the biascircuitry. In addition, spurious signals over a wide frequency rangeemitted by a charge pump for the negative voltage generator necessitatesa physical separation that further increases die size.

The present invention provides an FEM circuit that addresses the issuesidentified above. The FEM circuit of the present invention provides highlinearity and power efficiency and meets the requirements of modernwireless communication standards such as 802.11 WLAN, 3G and 4G cellularstandards, etc. In addition, the configuration of the FEM circuitpermits the use of common, relatively low cost semiconductor fabricationtechniques such as commercially available CMOS processes.

A block diagram illustrating an example dual-band multi-chip front endmodule (FEM) constructed in accordance with the present invention isshown in FIG. 1. The dual band FEM module, generally referenced 10,comprises four modules including a duplexer 52, 2.4 GHz FEM circuitmodule 40, 5 GHz FEM circuit module 28 and power management unit (PMU)module 12. The 2.4 GHz FEM circuit 28 is operative to receive andtransmit signals in the 2.4 GHz ISM band while the 5 GHz FEM circuit isoperative to receive and transmit signals in the 5 GHz ISM band. Each ofthe modules may be constructed on individual integrated circuits withprinted or wire bond connections between the chips. Alternatively, theFEM module may comprise a single integrated circuit and/or may handle asingle frequency band.

The duplexer 52 functions to couple one or more antennas to the 2.4 and5 GHz antenna ports. The PMU 12, which is optional in the circuit, maycomprise part or all the following: a DC-DC converter 24 (e.g., 3.3V),power on reset circuit 20, oscillator circuit 22 for generating clocksignals, biasing circuits and RF power ramp-up control, DC-DC convertercircuit 26 for the 2.4 GHz power amplifier (PA), DC-DC converter circuit18 for the 5 GHz PA, clock monitoring circuit 18 and control logic 14.

The 2.4 GHz FEM circuit module 40 comprises a TX/RX switch 46, poweramplifier circuit 42, low noise amplifier (LNA) circuit 44, controllogic 48 and interface (I/F) logic 50. The PA 42 functions to amplifythe TX signal output of the baseband circuit for broadcast through theantenna. The LNA 44 functions to amplify the receive signal receivedfrom the antenna and output an RX signal for demodulating and decodingby the baseband circuit.

Similarly, the 5 GHz FEM circuit module 28 comprises a TX/RX switch 34,power amplifier circuit 30, low noise amplifier (LNA) circuit 32,control logic 36 and interface (I/F) logic 38. The PA 30 functions toamplify the TX signal output of the baseband circuit for broadcastthrough the antenna. The LNA 32 functions to amplify the receive signalreceived from the antenna and output an RX signal for demodulating anddecoding by the baseband circuit.

A block diagram illustrating an example single chip FEM circuitconstructed in accordance with the present invention is shown in FIG. 2.The single chip FEM circuit, generally referenced 130, comprises a PAcircuit 132 for amplifying a TX signal from the baseband circuit forbroadcast through one or more antennas 140, an LNA circuit 134 foramplifying the received signal from one or more of the antennas andoutput an RX signal for demodulation and decoding by the basebandcircuit, a TX/RX switch 136 for coupling either the PA or the LNA to theantenna, optional antenna switch 138 for coupling the TX/RX switch toone or more antennas 140, control logic 142, I/F logic 144 and DC-DCconverter circuit 146.

Multiple antennas 140 may be used in a system employing spatialdiversity for example. In a MIMO system, multiple antennas are employedbut each antenna has its own associated FEM circuit where the combiningof the multiple receive signals and generating of multiple transmitsignals is performed via signal processing in the baseband circuit.

A block diagram illustrating an example DC-DC converter constructed inaccordance with the present invention shown in FIG. 3. The DC-DCconverter circuit, generally referenced 700, comprises a synchronousDC-DC converter 708, trim control logic 704, one or more trim cells 706,one or more trim capacitors 710, one or more output capacitors 712 andone or more output inductors 714. The function of the DC-DC convertercircuit is to generate an output voltage in accordance with a trimcontrol command signal input to the trim control logic. An envelopedetector (not shown) can be used to generate the trim control commandsuch that the output voltage generated tracks the RF input signal. Theoperation of the DC-DC converter circuit is described in more detailinfra.

A block diagram illustrating an example TX path portion of the FEMcircuit constructed in accordance with the present invention is shown inFIG. 4. The TX path circuit, generally referenced 150, comprises amatching network 152 that receives the RF input signal from thetransmitter or transceiver (TRX), a programmable delay 154, PA 156 forgenerating an RF output, control logic block 158, envelope detectors160, 170, low pass filters (LPF) 162, 172, power detectors 164, 174, andanalog to digital converters (ADC) 166, 176.

In this example embodiment, envelope detection is used on both the RFinput and the RF output to optimize the operation of the PA. The RFinput signal is tracked and the gain and optionally other parameters ofthe PA are adjusted (via control logic block 158) to maximize linearityand minimize power consumption of the circuit.

A block diagram illustrating a first example TX path portion of the FEMcircuit is shown in FIG. 5. The TX path, generally referenced 180,comprises a programmable delay 182, dual mode power amplifier circuit184, multi-tap transformer 188, mode/bias control 198, envelopedetectors 190, 200, LPF 192, ADC 194, 202 and control logic 196.

In this example embodiment, envelopment detection is used to track boththe RF input and the RF output signals. The envelope signals generatedare used to configure one or more parameters of operation of the dualmode PA 184 to maximize linearity, gain, etc. and minimize powerconsumption. The operation of the dual mode PA is described in moredetail infra. In operation, the feed-forward algorithm performs envelopedetection at the input to the power amplifier. The A/D converter samplesthe envelope signal. Digital control logic functions to drive the PAbias control in accordance with the envelope level, enabling theappropriate PA transistors the output of which are combined via amulti-tap transformer. The programmable delay functions to compensatefor the delay between the envelope detector and the RF signal path. Theuse of a feed-forward algorithm enables a significant improvement inefficiency as shown in FIG. 41 where trace 540 represents the poweradded efficiency (PAE) before linearization by the feed-forwardalgorithm of FIG. 5 and trace 542 represents the PAE afterlinearization.

The modulation generated by many modern wireless standards, such as802.11 and 802.11ac in particular, results in a signal with relativelylarge peak to average ratios. Considering, for example, orthogonalfrequency division modulation (OFDM), the peak to average ratioincreases as the number of subcarriers increases and is in the order of20 log (number of subcarriers). OFDM modulation using 256 subcarriers,for example, can generate 10-12 dB peak to average ratio. In addition,within each subcarrier, using 256 QAM requires relatively good errorvector magnitude (EVM), e.g., −32 dB. Noise, distortion, spurioussignals, IQ mismatch and phase noise of the PLL, power amplifiernonlinearity, adjacent channel leakage ratio (ACLR) all degrade the EVM.Thus the linearity requirements on the power amplifier and FEM circuitover all are relatively stringent. In addition, it is desirable tominimize the battery consumption thus requiring the FEM circuit to havea high efficiency.

Further, in one embodiment, it is desirable to construct the FEM circuitusing standard complementary metal oxide semiconductor (CMOS) integratedcircuit technology. Alternatively, the FEM circuit may be fabricatedusing any suitable semiconductor technology such as Gallium Arsenide(GaAs), Silicon Germanium (SiGe), Indium Gallium Phosphide (InGaP),Gallium Nitride (GaN), etc. Using CMOS technology, however, is desirabledue to lower cost and complexity and the ability to integrate digitallogic with analog circuitry.

In one embodiment, the power amplifier circuit 184 is constructed from aplurality of sub-power amplifiers or sub-amplifiers 186. The inputsignal is split and fed to each of the sub-amplifiers, which provides aportion of the total desired gain of the power amplifier. The outputs ofeach of the sub-amplifiers are combined to generate the RF outputsignal. In one embodiment, the combiner element comprises a multi-taptransformer an example of which is described in more detail infra.

In operation, the envelope detector 190 senses the RF input andgenerates an envelope representation of the signal that is then filteredand digitized and input to the control logic circuit 196. The RF outputis similarly sensed and a digitized envelope representation of thesignal is generated and input to the control logic circuit 196. Thebiasing of the sub-amplifiers 186 is controlled by bias control circuit198, which is driven by one or more control signals from the controllogic 196. The programmable delay compensates for the signal delaythrough the envelope detector and digitization steps.

A block diagram illustrating a second example TX path portion of the FEMcircuit is shown in FIG. 6. The TX path, generally referenced 210,comprises a dual mode power amplifier 218, power controller 212, DC-DCconverter 214 and output power detect circuit 216 which functions tosense the RF output.

In this embodiment, the gain of the power amplifier is controlled by apower control signal. In response to the power control signal and theoutput power level, the power controller generates a control signal forthe DC-DC converter, which modulates the supply voltage of the poweramplifier. The power amplifier 218 may comprise one or moresub-amplifiers depending on the implementation.

A block diagram illustrating a third example TX path portion of the FEMcircuit is shown in FIG. 7. The TX path, generally referenced 220,comprises a limiter 232, dual mode power amplifier 234, envelopedetector 222, programmable delay 224, regulator/buffer 226, ADC 228 andfast DC-DC converter 230. In operation, the circuit amplifies the TXsignal in a polar manner where a limited TX signal with amplitudestriped out is input to the PA. The gain of the PA is controlled andmodulated to track the amplitude of the original TX signal. The RF inputis sensed and the envelope generated and digitized by ADC 228. The fastDC-DC converter drives a regulator or buffer circuit 226 to generate thegain (or power supply) of the PA 234. The power amplifier 234 maycomprise one or more sub-amplifiers depending on the implementation.

A block diagram illustrating a fourth example TX path portion of the FEMcircuit is shown in FIG. 8. The TX path, generally referenced 240,comprises a driver circuit/buffer 242, power splitter 244, one or moredifferential sub-amplifiers 246 and power combiner 250. In operation,the RF input signal is input to a driver circuit whose output is inputto the splitter. The splitter functions to provide an input signal toeach of the sub-amplifiers 246. In one embodiment, the splittercomprises a multi-tap transformer 248 having a primary winding andmultiple secondary windings, one secondary for each sub-amplifier. Eachsub-amplifier may be adapted to handle either a differential (shown) orsingle ended input signal. The differential output of each sub-amplifieris coupled to a corresponding primary winding of a multi-tap combinertransformer 252. The output signal is generated in the secondary windingand provides the RF output of the TX path circuit. Note that theimpedance of each winding tap is adapted to be approximately 12.5 Ohm toyield a desired RF output impedance of approximately 50 Ohm.

In operation, the RF output signal is generated from the combination ofthe individual outputs of the sub-amplifiers. Each sub-amplifiercontributes a portion of the total power required from the poweramplifier circuit. The power generated by each sub-amplifier is combinedvia the combiner multi-tap transformer to generate the RF output signalhaving a combined total RF power.

Note that differential amplifiers (or balanced amplifiers) arepreferable in that they enable a doubling of the voltage swing that canbe applied to a balanced load. This quadruples the output power withoutincurring any additional stress on the transistors. Thus, an efficientpower amplifier is realized utilizing differential sub-amplifier stages.

In one embodiment, both the splitter and combiner transformers arefabricated in CMOS and integrated on the same die with other analog anddigital circuitry. In alternative embodiments, the transformers arefabricated using other technologies such as GaAs, InGaP, GaN, etc. Thetransformers comprise air cores and may take on any suitable shape andconfiguration. Several examples of integrated multi-tap transformers aredescribed in more detail infra. Note that in one embodiment, thetransformer is constructed to be relatively broadband so as to be ableto both 2.4 and 5.8 GHz WLAN signals. Alternatively, a diplexer,constructed from two transformers and two band pass filters, onetransformer and band pass filter for each frequency band. Note that theFEM circuit of the present invention is applicable to not only WLANsignal but any modulation scheme that exhibits high peak to averageratio, e.g., 3G, 4G LTE, etc.

A block diagram illustrating a fifth example TX path portion of the FEMcircuit shown in FIG. 9. The TX path, generally referenced 259,comprises a driver/splitter circuit 241, one or more differentialsub-amplifiers 251 and power combiner 243. The driver/splitter 241comprises multi-tap transformer 245 having a primary winding and twosecondary windings, one secondary winding for each differential driver247. Multi-tap transformer 255 comprises a pair of one-to-twotransformers each having a primary winding associated with driver 247and secondary windings for two sub-amplifiers 251. The combiner 243comprises a multi-tap transformer 253 having a primary windingassociated with each sub-amplifier 251 and a secondary winding forgenerating the RF output signal.

In operation, the RF input signal is input to a driver circuit 241 thatsplits the RF input signal into two signals. Each of the signals isinput to a driver 247 whose output is further split into two signals.The splitter functions to provide an input signal to each of thesub-amplifiers 251. In one embodiment, the splitter comprisestransformers 245, 255 and driver circuit 247. Each sub-amplifier may beadapted to handle either a differential (shown) or single ended inputsignal. The differential output of each sub-amplifier is coupled to acorresponding primary winding of a multi-tap combiner transformer 253.The output signal is generated in the secondary winding and provides theRF output of the TX path circuit. Note that the impedance of eachwinding tap is adapted to be approximately 12.5 Ohm to yield a desiredRF output impedance of approximately 50 Ohm.

In operation, the RF output signal is generated from the combination ofthe individual outputs of the sub-amplifiers. Each sub-amplifiercontributes a portion of the total power required from the poweramplifier circuit. The power generated by each sub-amplifier is combinedvia the combiner multi-tap transformer to generate the RF output signalhaving a combined total RF power.

In one embodiment, both the splitter and combiner transformers arefabricated in CMOS and integrated on the same die with other analog anddigital circuitry. In alternative embodiments, the transformers arefabricated using other technologies such as GaAs, GaN, etc. Thetransformers comprise air cores and may take on any suitable geometricalshape and configuration. Several examples of integrated multi-taptransformers are described in more detail infra.

A block diagram illustrating a sixth example TX path portion of the FEMcircuit shown in FIG. 10. The TX path, generally referenced 260,comprises a driver circuit 262, power splitter 264, four dual modesub-power amplifiers 266 and a power combiner 272. In operation, the RFinput signal is input to the driver circuit. The output of the driver isthen split and fed to each of the sub-amplifiers. In this embodiment,the number of sub-amplifiers is four but any number may be useddepending on the particular implementation. Each sub-amplifier providesa portion of the total required gain. The outputs of the sub-amplifiersare combined to generate the RF output signal.

In one embodiment, one or more of the sub-power amplifiers, operating inparallel and making up the power amplifier, are identical with eachsub-amplifier comprised of separate high and low amplifiers. The highamplifier operates at relatively large backoff (e.g., 12 dB) and isadapted to handle the high peak input amplitudes seen roughly 5% of thetime. In one embodiment, the high amplifier is implemented as a class Cnonlinear amplifier having appropriate biasing to amplify the peaksignals with high efficiency. The low amplifier operates at lowerbackoff (e.g., 6 dB) and is adapted to handle the lower average inputamplitudes seen roughly 95% of the time. In one embodiment, the lowamplifier is implemented as a class AB linear amplifier havingappropriate biasing to amplify the average signals with high linearity.Note that in an alternative embodiment, each sub-amplifier may comprisemore than two amplifiers and/or be implemented using amplifiers otherthan class AB and C depending on the particular application.

Note that the use of separate high and low amplifiers in eachsub-amplifier enables the power amplifier and FEM circuit to comply withthe stringent linearity and spectral efficiency requirements of modernwireless standards, such as 802.11 Wi-Fi (802.11 ac in particular), LTE,3G, 4G, etc., whose signals exhibit high peak to average ratios whileproviding relatively high efficiency resulting in minimized batteryconsumption.

A block diagram illustrating the high and low portions of the poweramplifier circuit in more detail is shown in FIG. 11. The circuit,generally referenced 280, represents one of the sub-amplifiers of thepower amplifier circuit 266 (FIG. 10). In one embodiment, four identicalsub-amplifiers are used to generate the total desired power gain.Although in alternative embodiments, they may not be identical. Thecircuit 280 comprises a high circuit path and a low circuit path. Thehigh path comprises matching circuits 282, 286 and high power amplifier285. The low path comprises matching circuits 290, 294 and poweramplifier 292. Power combiner (e.g., multi-tap transformer) 288 combinesthe outputs of the high and low amplifiers to generate the RF output forone of the sub-amplifiers. In the case of high and low circuit paths,the multi-tap combiner transformer comprises taps for high and lowsub-amplifier outputs for each of the sub-amplifiers (four in thisexample embodiment) making up the power amplifier.

A graph of the AM2AM and AM2PM performance of the high and low circuitpaths is shown in FIG. 40. Trace 530 represents the low circuit responseand trace 534 represents the high circuit response as a function ofoutput power. Trace 526 represents the combined response. Similarly,trace 532 represents the low circuit response and trace 536 representsthe high circuit response as a function of output power. Trace 528represents the combined response.

A schematic diagram illustrating a first example of a sub-amplifiercircuit in more detail is shown in FIG. 12A. The sub-amplifier circuit,generally referenced 360, functions to amplify a differential RF inputsignal applied to the PA IN+ and PA IN− terminals. The circuit comprisesa transistor current modulation topology to amplifier the RF inputsignal. The outputs of one or more instances of the sub-amplifier arecombined to generate the RF output signal having the desired total gain.The plus side of the sub-amplifier comprises capacitors 362, 368, 377,resistors 372, 374, transistors 364, 370, 378, low power bias circuit376, high power bias circuit 366, and transformer 379 having a poweramplifier primary winding 384 (L_(PA)) and secondary winding 382.Similarly, the minus side of the sub-amplifier comprises capacitors 402,398, 393, resistors 404, 406, transistors 400, 396, 394, low power biascircuit 390, high power bias circuit 392, and transformer 380 having apower amplifier primary winding 386 (L_(PA)) and secondary winding 388.

In operation, the low power transistors of both plus and minus circuitsare biased for and operate as linear class A/AB amplifiers for averageamplitude inputs while the high power transistors of both plus and minuscircuits are biased for and operate as high efficiency class Camplifiers for peak amplitude inputs. The power generated by the highand low portion of the sub-amplifier is combined in the transistorcircuit (370, 364 and 396, 400) via current combining. FIG. 12Billustrates the sub-amplifier output connections to the integratedtransformer 381 in more detail.

A schematic diagram illustrating a second example of a sub-amplifiercircuit in more detail is shown in FIG. 13A. The sub-amplifier circuit,generally referenced 300, functions to amplify a differential RF inputsignal applied to the PA IN+ and PA IN− terminals. The outputs of one ormore instances of the sub-amplifier are combined to generate the RFoutput signal having the desired total gain.

The plus side of the sub-amplifier comprises capacitors 302, 317, 319,322, resistors 304, 329, transistors 318, 320 and 308, 324, low powerbias circuit 326 and high power bias circuit 328, and transformer 310having low primary winding 312 (L_(LO)), high primary winding 316(L_(HI)) and secondary winding 314 (PA OUT+). Similarly, the minus sideof the sub-amplifier comprises capacitors 330, 347, 349, 352, resistors332, 359, transistors 348, 350 and 334, 354, low power bias circuit 356and high power bias circuit 358, and transformer 340 having low primarywinding 342 (L_(LO)), high primary winding 346 (L_(HI)) and secondarywinding 344 (PA OUT−).

In operation, the low power transistors of both plus and minus circuitsare biased for and operate as linear class A/AB amplifiers for averageamplitude inputs while the high power transistors of both plus and minuscircuits are biased for and operate as high efficiency class Camplifiers for peak amplitude inputs. In this embodiment, the powergenerated by the high and low portions of the sub-amplifier are combinedmagnetically in the transformer circuit (312, 316 and 342, 346). FIG.13B illustrates the sub-amplifier output connections to the integratedtransformer 341 in more detail.

In one embodiment, the high and low primary windings 312, 316 (342, 346)correspond to high and low primary windings 502, 504 of FIG. 16. Thesecondary winding 314 (344) corresponds to the secondary winding 518 ofFIG. 16.

A schematic diagram illustrating a third example of a sub-amplifiercircuit in more detail is shown in FIG. 14. This sub-amplifier circuitis similar to the circuit shown in FIG. 13 with low and high powertransistor paths. The difference being the addition of a second highpower transistor (HP1) in parallel with the low power transistor (LP).

The sub-amplifier circuit, generally referenced 410, functions toamplify a differential input signal applied to the PA IN+ and PA IN−terminals. The outputs of one or more instances of the sub-amplifier arecombined to generate the RF output signal having the desired total gain.

The plus side of the sub-amplifier comprises capacitors 412, 416, 440,419, 433, resistors 415, 419, 443, transistors 418 (LP), 414 (HP1), 442(HP2) and 420, 434, low power bias circuit 417, high power 1 biascircuit 413 and high power 2 bias circuit 441, and transformer 419having low primary winding 422 (L_(LO)), high primary winding 426(L_(HI)) and secondary winding 424 (PA OUT+). Similarly, the minus sideof the sub-amplifier comprises capacitors 446, 450, 454, 435, 437,resistors 447, 451, 455, transistors 448 (LP), 452 (HP1), 444 (HP2) and436, 438, low power bias circuit 449, high power 1 bias circuit 453 andhigh power 2 bias circuit 445, and transformer 421 having low primarywinding 432 (L_(LO)), high primary winding 428 (L_(HI)) and secondarywinding 430 (PA OUT−).

In operation, the low power transistors of both plus and minus circuitsare biased for and operate as linear class A/AB amplifiers for averageamplitude inputs while the high power 1 and high power 2 transistors ofboth plus and minus circuits are biased for and operate as highefficiency class C amplifiers for peak amplitude inputs. In thisembodiment, the power generated by the high and low portions of thesub-amplifier are combined magnetically in the transformer circuit (422,426 and 428, 432).

In one embodiment, the high and low primary windings 422, 426 (432, 428)correspond to high and low primary windings 502, 504 of FIG. 16. Thesecondary winding 424 (430) corresponds to the secondary winding 518 ofFIG. 16.

The FEM circuit of the present invention utilizes transformer basedpower combining techniques to generate the RF output signal. The use oftransformer based power combining increases the output power capabilityof the FEM. The power amplifier is split into a plurality ofsub-amplifiers (four quarters in this example), with each sub-amplifiersupplying a quarter of the power in series. This minimizes or eliminatesany transistor stress issue, depending on the particular technologyemployed. Each quarter (i.e. sub-amplifier) is further split into highand low power portions. This increases the efficiency by up to 40% overuse of a single transistor sub-amplifier.

With reference to FIGS. 8 and 9, the primary windings are driven by theindependent sub-amplifiers PA1, PA2, PA3, PA4 while the secondarywindings are connected in series. The power delivered to the load is thesum of the output power generated by each sub-amplifier. Note that somepower may be dissipated in any matching networks coupled to thetransformer.

Thus, the power combiner not only efficiently sums the ac voltages ofthe individual sub-amplifiers but also performs an impedancetransformation function. Since the secondary winding of each transformercarries the same current, the sub-amplifiers are coupled to each other.Thus, the impedance seen by each sub-amplifier is determined by theoutput voltage and output impedance of the other sub-amplifiers. If thesub-amplifiers have the same output impedance and generate the sameoutput voltage and the transformers have the same turns ratio, then theimpedance seen by each sub-amplifier is determined by the turns ratio ofeach transformer and the number of parallel stages (four in this exampleembodiment).

A layout diagram illustrating a first example power combining integratedtransformer for use with the power amplifier of the present invention isshown in FIG. 15. The transformer, generally referenced 460, comprisesfour primary windings in a two dimensional (2D) quad shaped arrangementwherein winding 462 is coupled to the output of sub-power amplifier 1,winding 464 is coupled to the output of sub-power amplifier 2, winding466 is coupled to the output of sub-power amplifier 3 and winding 468 iscoupled to the output of sub-power amplifier 4. The secondary winding470 snakes around the four primary windings and is coupled to the TX/RXswitch. Note that in this embodiment, the magnetic field is symmetricaround symmetry lines 461 and 463. The transformer has an air core andthe width, spacing and thickness of the metal layer is configured toprovide sufficient performance at the respective frequency bands (e.g.,2.4 and 5 GHz) and exhibits input and output impedance to meet therequired inductance and Q factor. Note that alternative configurationsfor the transformer windings may be implemented depending on theapplication. For example, the primary and secondary windings may beimplemented on the same or different metal layers.

A layout diagram illustrating a second example integrated transformerfor use with the power amplifier of the present invention is shown inFIG. 16. The transformer, generally referenced 500, comprises four setsof octagonal shaped primary windings and one secondary winding in a quadshaped arrangement. Each set of parallel primary windings comprises ahigh loop and a low loop to accommodate the high and low amplifiers ofthe sub-amplifiers shown in FIGS. 12A, 12B, 13A, 13B, 14, for example.The inner winding of each set of primary windings is from the highamplifier and the outer winding is from the low amplifier. The middlewinding is the secondary, which runs between the primary windings. Notethat separating the high and low power windings has the advantage ofproviding a way to better control the phase distortion of eachsub-amplifier thus providing improved combined control of the totalphase distortion of the power amplifier. In addition, stretching thewindings of the outer set of windings (or the inner set) alsocompensates for phase distortion between the PA sub-amplifiers. The useof multiple techniques described herein enables the FEM to achievemaximum efficiency and lowest EVM.

In particular, the integrated transformer comprises windings 502, 504,506, 508, 510, 512, 514, 516 and a secondary winding 518 wherein winding504 is coupled to the low differential output of sub-amplifier 1,winding 502 is coupled to the high differential output of sub-amplifier1; winding 508 is coupled to the low differential output ofsub-amplifier 2, winding 506 is coupled to the high differential outputof sub-amplifier 2; winding 512 is coupled to the low differentialoutput of sub-amplifier 3, winding 510 is coupled to the highdifferential output of sub-amplifier 3; and winding 516 is coupled tothe low differential output of sub-amplifier 4, winding 514 is coupledto the high differential output of sub-amplifier 4. Note that the outerprimary winding of each transformer is coupled to the low output of thesub-amplifier rather than the inner winding because the inductance ofthe outer winding is larger as it has a longer length. The shorter innerwinding is coupled to the high power output of each sub-amplifier. Thesecondary winding 518 snakes between the four pairs of ‘+’ and ‘−’primary windings and is coupled to the TX/RX switch. Running thesecondary winding between the ‘+’ and ‘−’ primary windings improvesmagnetic coupling between the two. The transformer has an air core andthe width, spacing and thickness of the metal layers is configured toprovide sufficient performance at the respective frequency bands (e.g.,2.4 and 5 GHz) and exhibits input and output impedance to meet therequired inductance and Q factor. Note that alternative configurationsfor the transformer windings may be implemented depending on theparticular application.

A layout diagram illustrating a third example integrated transformer foruse with the power amplifier of the present invention shown in FIG. 17.The transformer, generally referenced 570, comprises four sets ofoctagonal shaped primary windings and one secondary winding in a quadshaped arrangement. Each set of primary windings comprises two parallelwindings. The middle winding is the secondary, which runs between theparallel primary windings. This reduces the current crowding (proximity)effect as the current is spread more uniformly in the secondary therebyreducing losses.

In particular, the integrated transformer comprises four sets ofwindings, each associated with one of the differential sub-amplifiers.Each set of windings comprises parallel primary windings 572, 574 andsecondary winding 576. The parallel primary windings are coupled to thesub-amplifiers PA1, PA2, PA3 and PA4. Parallel primary windings enablethe transformer to handle higher current. The secondary winding 576snakes between the four parallel primary windings via connectors 579 togenerate the PA output which is subsequently coupled to the TX/RXswitch. Running the secondary winding between the parallel primarywindings improves magnetic coupling between the two and mitigates theproximity effect as described supra. The transformer has an air core andthe width, spacing and thickness of the metal layers is configured toprovide sufficient performance at the respective frequency bands (e.g.,2.4 and 5 GHz) and exhibits input and output impedance to meet therequired inductance and Q factor. Note that alternative configurationsfor the transformer windings may be implemented depending on theparticular application.

A layout diagram illustrating a fourth example integrated transformerfor use with the power amplifier of the present invention shown in FIG.18. The transformer, generally referenced 560, comprises four sets ofoctagonal shaped primary windings and one secondary winding arranged ina sequential or linear row array configuration. Each set of primarywindings comprises two parallel windings. This reduces the currentcrowding (proximity) effect as the current is spread more uniformly inthe secondary thereby reducing losses. It also increases the currenthandling capability of the transformer. The middle winding is thesecondary, which runs between the parallel primary windings.

In particular, the integrated transformer comprises four sets ofwindings, each associated with one of the differential sub-amplifiers.Each set of windings comprises parallel primary windings 562, 564 andsecondary winding 566. The parallel primary windings are coupled to thesub-amplifiers PA1, PA2, PA3 and PA4. The secondary winding 566 snakesbetween the four parallel primary windings via connectors 568 togenerate the PA output which is subsequently coupled to the TX/RXswitch. Running the secondary winding between the parallel primarywindings improves magnetic coupling between the two and mitigates theproximity effect as described supra. The transformer has an air core andthe width, spacing and thickness of the metal layers is configured toprovide sufficient performance at the respective frequency bands (e.g.,2.4 and 5 GHz) and exhibits input and output impedance to meet therequired inductance and Q factor. Note that alternative configurationsfor the transformer windings may be implemented depending on theparticular application.

In the circuit of FIG. 19A, a center tap 588 in each transformer isconnected to V_(DD). The parallel primary windings 582, 584 andsecondary winding 586 operate similarly to that of the integratedtransformer of FIG. 18 with the addition of the center tap 588 in thetransformer of FIG. 19A.

A layout diagram illustrating a sixth example integrated transformer foruse with the power amplifier of the present invention shown in FIG. 19B.The integrated transformer, generally referenced 571, comprises foursets of windings in a linear row configuration, each associated with oneof the differential sub-amplifiers. Each set of windings comprises apair of parallel primary windings 581, 583 and secondary winding 585.The parallel primary windings in each set are coupled to the high andlow circuit outputs in the sub-amplifiers of each of PA1, PA2, PA3 andPA4. In each set of windings, the inner inductor loop is used for lowpower sub-amplifier and the outer inductor loop is used for the highpower sub-amplifier, for example, the two cascade amplifiers shown inFIGS. 12A, 12B, 13A, 13B. A center tap 587 in each transformer isconnected to V_(DD). The secondary winding is routed between the foursets of parallel primary windings via connectors to generate the PAoutput which is subsequently coupled to the TX/RX switch. Routing thesecondary winding between the parallel primary windings improvesmagnetic coupling between the two and mitigates the proximity effect asdescribed supra. The transformer has an air core and the width, spacingand thickness of the metal layers is configured to provide sufficientperformance at the respective frequency bands (e.g., 2.4 and 5 GHz) andexhibits input and output impedance to meet the required inductance andQ factor. Note that alternative configurations for the transformerwindings may be implemented depending on the particular application.

19C is a layout diagram illustrating a seventh example integratedtransformer for use with the power amplifier of the present inventionshown in FIG. 19C. The integrated transformer, generally referenced 491,comprises four sets of windings in a linear row configuration, eachassociated with one of the differential sub-amplifiers. Each set ofwindings comprises a pair of parallel primary windings 501, 503 andsecondary winding 505. The parallel primary windings in each set arecoupled to the high and low circuit outputs in the sub-amplifiers ofeach of PA1, PA2, PA3 and PA4. A center tap 507 in each transformer isconnected to V_(DD). Note that the set of windings for PA1 and PA4 arelonger (i.e. stretched) than that of PA2 and PA3. This serves tocompensate for phase mismatch generated in the PA sub-amplifiers.

The secondary winding is routed between the four sets of parallelprimary windings via connectors to generate the PA output which issubsequently coupled to the TX/RX switch. Routing the secondary windingbetween the parallel primary windings improves magnetic coupling betweenthe two and mitigates the proximity effect as described supra. Thetransformer has an air core and the width, spacing and thickness of themetal layers is configured to provide sufficient performance at therespective frequency bands (e.g., 2.4 and 5 GHz) and exhibits input andoutput impedance to meet the required inductance and Q factor. Note thatalternative configurations for the transformer windings may beimplemented depending on the particular application. This configurationand any of the integrated transformer configurations described hereinmay be used with any of the sub-amplifier configurations describedsupra, i.e. the circuits of FIGS. 12A, 12B, 13A, 13B and 14.

A layout diagram illustrating an eighth example integrated transformerfor use with the power amplifier of the present invention shown in FIG.20. The transformer, generally referenced 590, comprises a splitter 594,four sub-amplifiers 604 and a combiner 606. The splitter comprises oneprimary winding 600 and four sets of octagonal shaped secondary windingsarranged in a sequential or linear row array configuration. Each set ofsecondary windings comprises two parallel windings 596, 598. Thisincreases the current handling capability of the transformer. The middlewinding is the primary, which runs between the parallel secondarywindings.

To minimize and compensate for any phase mismatch between the individualtransformers in the splitter caused by a difference between the outertwo PA1, PA4 transformers and the inner two PA2, PA3 transformers, thedifferential outputs are crossed between the PA1 and PA2 windings andthe PA3 and PA4 windings.

The combiner comprises four sets of octagonal shaped primary windings610, 608 and one secondary winding 611 arranged in a sequential orlinear row array configuration. Each set of primary windings comprisestwo parallel windings. This reduces the current crowding (proximity)effect as the current is spread more uniformly in the secondary therebyreducing losses. It also increases the current handling capability ofthe transformer. The middle winding is the secondary, which runs betweenthe parallel primary windings.

In particular, both the splitter and combiner comprise four sets ofwindings, each associated with one of the differential sub-amplifiersPA1, PA2, PA3 and PA4. The RF input signal is input to a buffer 592whose differential output is applied to the primary of the splittertransformer. The parallel secondary windings of each transformer of thesplitter are coupled to a respective differential input of asub-amplifier. The primary winding 600 snakes between the four sets ofparallel secondary windings to generate the four signals input to thesub-amplifiers. The output of each sub-amplifier is input to arespective transformer in the combiner. The secondary winding 611 snakesbetween the four sets of parallel primary windings 610, 608 to generatethe PA output which is subsequently coupled to the TX/RX switch. Thetransformers in the splitter and combiner both have air cores and thewidth, spacing and thickness of the metal layers is configured toprovide sufficient performance at the respective frequency bands (e.g.,2.4 and 5 GHz) and exhibits input and output impedance to meet therequired inductance and Q factor. Note that alternative configurationsfor the transformer windings may be implemented depending on theparticular application.

In an alternative technique to combat any phase mismatch of thetransformers, a tuning capacitor is added to each primary winding in thecombiner. The capacitor, however, may be lossy thereby reducing thepower gain of the power amplifier. Such a circuit is shown in FIG. 21.The use of a capacitor enables the transformer to achieve better phasecompensation across the transformer windings. It also reduces parasiticlosses and results in lower phase and amplifier error.

The transformer, generally referenced 620, comprises a splitter 624,four sub-amplifiers 634 and a combiner 636. The splitter comprises oneprimary winding 630 and four sets of octagonal shaped secondary windingsarranged in a sequential or linear row array configuration. Each set ofsecondary windings comprises two parallel windings 626, 628. Thisincreases the current handling capability of the transformer. The middlewinding is the primary, which runs between the parallel secondarywindings.

The combiner comprises four sets of octagonal shaped primary windings638, 640, one secondary winding 642 and capacitor 646 arranged in asequential or linear row array configuration. Each set of primarywindings comprises two parallel windings. This reduces the currentcrowding (proximity) effect as the current is spread more uniformly inthe secondary thereby reducing losses. It also increases the currenthandling capability of the transformer. The middle winding is thesecondary, which runs between the parallel primary windings.

In particular, both the splitter and combiner comprise four sets ofwindings, each associated with one of the differential sub-amplifiersPA1, PA2, PA3 and PA4. The RF input signal is input to a buffer 622whose differential output is applied to the primary of the splittertransformer. The parallel secondary windings of each transformer of thesplitter are coupled to a respective differential input of asub-amplifier. The primary winding 630 snakes between the four sets ofparallel secondary windings to generate the four signals input to thesub-amplifiers. The output of each sub-amplifier is input to arespective transformer in the combiner. The secondary winding 642 snakesbetween the four sets of parallel primary windings 638, 640 to generatethe PA output which is subsequently coupled to the TX/RX switch. Thetransformers in the splitter and combiner both have air cores and thewidth, spacing and thickness of the metal layers is configured toprovide sufficient performance at the respective frequency bands (e.g.,2.4 and 5 GHz) and exhibits input and output impedance to meet therequired inductance and Q factor. Note that alternative configurationsfor the transformer windings may be implemented depending on theparticular application.

In another alternative technique to combat any phase mismatch of thetransformers, the primary windings of the inner two transformers of thecombiner (i.e. PA2 and PA3 windings) are made longer than those of theouter two transformers (i.e. PA1 and PA4 windings). This effectivelyincreases the inductance of the inner two primary windings to a valueL+ΔL with the outer two primary windings having an inductancerepresented by L. This eliminates the need to crossover the inputs tothe differential sub-amplifiers. Such a circuit is shown in FIG. 22.Note that increasing the inductance by an amount ΔL of approximately 20%(i.e. 10% per side) is effective in minimizing the phase mismatch. It isalso noted that the variation in inductance L with PVT is roughly ±8%versus ±20% for capacitance C 646 used in the circuit of FIG. 20.

The transformer, generally referenced 650, comprises a splitter 654,four sub-amplifiers 662 and a combiner 663. The splitter comprises oneprimary winding 657 and four sets of octagonal shaped secondary windingsarranged in a sequential or linear row array configuration. Each set ofsecondary windings comprises two parallel windings 656, 658. Thisincreases the current handling capability of the transformer. The middlewinding is the primary, which runs between the parallel secondarywindings.

The combiner comprises four sets of octagonal shaped primary windings(664, 666) and 674,672) and one secondary winding 668, 676 arranged in asequential or linear row array configuration. As described supra, theinner two sets of windings corresponding to PA2 and PA3 have longerwindings resulting in larger inductance of L+ΔL. Each set of primarywindings comprises two parallel windings. This reduces the currentcrowding (proximity) effect as the current is spread more uniformly inthe secondary thereby reducing losses. It also increases the currenthandling capability of the transformer. The middle winding is thesecondary, which runs between the parallel primary windings.

In particular, both the splitter and combiner comprise four sets ofwindings, each associated with one of the differential sub-amplifiersPA1, PA2, PA3 and PA4. The RF input signal is input to a buffer 652whose differential output is applied to the primary of the splittertransformer. The parallel secondary windings of each transformer of thesplitter are coupled to a respective differential input of asub-amplifier. The primary winding 657 snakes between the four sets ofparallel secondary windings to generate the four signals input to thesub-amplifiers. The output of each sub-amplifier is input to arespective transformer in the combiner. The secondary winding 668, 676snakes between the four sets of parallel primary windings (664, 666) and674,672) and to generate the PA output which is subsequently coupled tothe TX/RX switch. The transformers in the splitter and combiner bothhave air cores and the width, spacing and thickness of the metal layersis configured to provide sufficient performance at the respectivefrequency bands (e.g., 2.4 and 5 GHz) and exhibits input and outputimpedance to meet the required inductance and Q factor. Note thatalternative configurations for the transformer windings may beimplemented depending on the particular application.

A layout diagram illustrating a eleventh example integrated transformerfor use with the power amplifier of the present invention is shown inFIG. 23. In this alternative embodiment, to address the phase mismatchof the transformers, the primary windings of the inner two transformersof the combiner (i.e. PA2 and PA3 windings) are made longer than thoseof the outer two transformers (i.e. PA1 and PA4 windings). Thiseffectively increases the inductance of the inner two primary windingsto a value L+ΔL with the outer two primary windings having an inductancerepresented by L. This eliminates the need to crossover the inputs tothe differential sub-amplifiers. Note that increasing the inductance byan amount ΔL of approximately 20% (i.e. 10% per side) is effective inminimizing the phase mismatch. It is also noted that the variation ininductance L with PVT is roughly ±8% versus ±20% for capacitance C 646used in the circuit of FIG. 20.

The transformer, generally referenced 680, comprises a splitter 690,four sub-amplifiers 688 and a combiner 692. The splitter comprises oneprimary winding 686 and four sets of rectangular shaped secondarywindings 684 arranged in a sequential or linear row array configuration.

The combiner comprises four sets of rectangular shaped primary windings694 and one secondary winding 696 arranged in a sequential or linear rowarray configuration. As described supra, the inner two sets of windingscorresponding to PA2 and PA3 have longer windings resulting in largerinductance of L+ΔL.

In particular, both the splitter and combiner comprise four sets ofwindings, each associated with one of the differential sub-amplifiersPA1, PA2, PA3 and PA4. The RF input signal is input to a buffer 682whose differential output is applied to the primary of the splittertransformer. The parallel secondary windings of each transformer of thesplitter are coupled to a respective differential input of asub-amplifier. The primary winding 686 encircles the four secondarywindings to generate the four signals input to the sub-amplifiers. Theoutput of each sub-amplifier is input to a respective transformer in thecombiner. The secondary winding 696 encircles the four primary windings694 to generate the PA output which is subsequently coupled to the TX/RXswitch. The transformers in the splitter and combiner both have aircores and the width, spacing and thickness of the metal layers isconfigured to provide sufficient performance at the respective frequencybands (e.g., 2.4 and 5 GHz) and exhibits input and output impedance tomeet the required inductance and Q factor. Note that alternativeconfigurations for the transformer windings may be implemented dependingon the particular application.

In battery-operated wireless systems, such as mobile phones, an RF poweramplifier (PA) is usually the most significant power-consumingcomponent. To minimize the power consumption, a system-level powermanagement scheme is designed to operate the RF PA over a wide range ofoutput power. With a fixed supply voltage, the RF PA efficiency at lowerpower levels is very low, which adversely affects the average powerconsumption and the battery life. To improve the RF PA overallefficiency over the wide range of power, dynamic control of the supplyvoltage is implemented.

Power amplifier efficiency (PAE) is a critical factor in the RF designof modern wireless systems. In cellular base stations, for example,power consumption costs carriers millions of dollars annually. In smartphones, PA efficiency is an increasing concern as battery life declinesand handsets get hotter. This inefficiency is brought about because themost recent higher-speed 3G and 4G technologies use modulation methodssuch as WCDMA and Long-Term Evolution (LTE) with quadrature amplitudemodulation (QAM) over orthogonal frequency-division multiplexing (OFDM).All of these technologies require linear PAs that are less efficient bytheir nature. The typical linear RF PA operates in class A or class ABto achieve its linearity. Maximum theoretical efficiency is 50%, but inpractice, maximum efficiencies are in the 30% to 35% range. Thisefficiency is best achieved when the amplifier is in compression oroperating near the compression point. Compression occurs when the inputsignal is at or near its peak. With the latest modulation methods, thePeak to Average Power Ratio (PAPR) is high. The PA then operates wellbelow the compression point for much of the transmission, providing goodlinearity with an efficiency average of 20% or less. This causes thepower dissipated as heat to increase, and the excessive current drawn bythe PA leads to shorter battery life.

The present invention addresses this issue by utilizing envelopetracking which replaces the typical fixed DC supply for the PA with afast-changing DC supply that dynamically tracks the amplitude orenvelope of the RF signal. Envelope Tracking (ET) and EnvelopeElimination and Restoration (EER) are two techniques used to realizehighly efficient linear RF power amplifiers. In both techniques, ahigh-efficiency modulated power supply supplies the RF PA with variablevoltage as shown in FIGS. 24 and 25.

A block diagram illustrating a seventh example TX path portion of theFEM circuit incorporating envelope tracking is shown in FIG. 24. Thecircuit, generally referenced 760, comprises an input coupler 762,envelope detector 764, modulated power supply 766 and linear RF poweramplifier 768. In operation, an envelope of the RF input signal isgenerated by the envelopment detector and input to the modulated powersupply which generates a dc voltage output Vout that conforms to theenvelope of the RF input signal. This voltage output serves as thesupply voltage for the linear RF PA. Note that power buffer is optionalas the DC-DC converter output voltage can be connected directly to thePA supply voltage as the power amplifier is based on a linear topology(i.e. ET).

A block diagram illustrating an eighth example TX path portion of theFEM circuit incorporating envelope elimination and restoration is shownin FIG. 25. The circuit, generally referenced 770, comprises an inputcoupler 772, envelope detector 774, modulated power supply 776, limiter778 and nonlinear RF power amplifier 779. In operation, an envelope ofthe RF input signal is generated by the envelopment detector and inputto the modulated power supply which generates a dc voltage output Voutthat conforms to the envelope of the RF input signal. The limitergenerates a phase reference signal that is input to the nonlinear PA.The voltage output Vout serves as the supply voltage for the nonlinearRF PA. Note that use of a power buffer in this circuit is not optionalas the PA is based on a non-linear topology (i.e. EER).

A technique for using a DC-DC converter with very fast output voltagetransitions to realize a high-efficiency envelope tracking system isdescribed below.

A system block diagram implementing a closed-loop RF power controlthrough the power supply is shown in FIG. 26A. The circuit, generallyreferenced 950, comprises an RF power amplifier 956, an output powerdetector 958, power controller block 952 and DC-DC converter 954. Theoutput RF power is sensed through the detector 958 and compared to apower control command signal. In response to the error between thesensed RF power and the command power, the trim control of the DC-DCconverter 954 adjusts the output voltage (Vout). In the steady state,the measured output power ideally equals the power control command. Inthis system, compared to a more traditional realization where the supplyvoltage for the RF PA is constant, the overall efficiency improvementdepends on the DC-DC converter which is capable of maintaining very highefficiency over a wide range of output voltages and output power levels.The challenge in implementing a conventional DC-DC converter for the RFPA is the need to provide very fast output voltage transitions inresponse to the RF PA output power changes. Described below is a novelapproach for providing very fast output voltage transitions in the DC-DCconverter.

A high level block diagram of an example synchronous DC-DC converter isshown in FIG. 26A (buck topology is presented for illustration purposesonly but boost, forward and any other DC-DC converter configuration maybe used). The circuit, generally referenced 720, comprises input voltageVin 722, switches 724, 726, switch driver 736, inductor Lo 728,capacitor Co 730, resistors R1, R1, pulse width modulation (PWM)generator 734 and error amplifier 732. In operation, the buck converteris used to generate a lower output voltage (Vout) from a higher DC inputvoltage (Vin). If the losses in both switches (high-side and low-sideFETs) and inductor are ignored then the duty cycle or the ratio of ONtime to the total period of the converter can be expressed as

$\begin{matrix}{D = \frac{Vout}{Vin}} & (1)\end{matrix}$

The duty cycle is determined by the output of the error amplifier (Verr)and the PWM ramp voltage (Vosc) as shown in FIG. 26B. The Vosc signal inthis and other embodiments may comprise sinusoidal, triangle, saw toothor any other suitable signal. The ON time begins on the falling edge ofthe PWM ramp voltage and stops when the ramp voltage equals the outputvoltage of the error amplifier. The output of the error amplifier (Yen)in turn is set so that the feedback portion of the output voltage (Vout)is equal to the internal reference voltage (Vref). This closed-loopfeedback system causes the output voltage to regulate at the desiredlevel. Normally, a resistor divider network (R1 and R2) as shown in FIG.26B is used to feed back a portion of the output voltage to theinverting terminal of the error amplifier. This voltage is compared toVref and during steady state regulation the error-amplifier output willnot go below the voltage required to maintain the feedback voltage equalto Vref. Thus, the output voltage can be expressed as

$\begin{matrix}{{Vout} = {{Vref}\left( {1 + \frac{R\; 1}{R\; 2}} \right)}} & (2)\end{matrix}$As it can be seen from Equation (2), the output voltage (Vout) can bechanged by varying the reference voltage (Vref).

In order to provide very fast output voltage transitions in the DC-DCconverter, the present invention provides a novel approach describedbelow. A high level block diagram of a synchronous DC-DC buck converterincorporating an example fast output voltage transition circuit is shownin FIG. 27. The circuit, generally referenced 740, comprises an inputvoltage source Vin 742, switches 744, 746, switch driver 759, outputinductor Lo 748, output capacitor Co 749, trim cell 750, trim controlblock 754, resistors R1, R2, error amplifier 756 and PWM generator 758.The trim cell comprises trim buffer 752 m capacitor Ctrim and switchesS1, S2.

In operation, during the steady state mode, switch S1 is on and switchS2 is off. The capacitor Ctrim is charged to Vtrim through the trimbuffer. In this mode, the converter operates as the DC-DC converter inFIG. 26B and its output voltage value can be calculated using Equation(2). The output capacitor (Co) is charged to the output voltage (Vout).Once the trim control command is applied as a trim up command (i.e.output voltage increases), switch S1 is turned off and switch S2 isturned on thereby connecting the trim capacitor (Ctrim) in series to theoutput capacitor (C0). The voltage on these two capacitors is defined asVout+Vtrim such that the output voltage (Vout) increases very quickly(virtually instantaneously) to the new value given byVout_trim_up=Vout+Vtrim  (3)

In order to keep the DC-DC converter feedback loop in the steady-statecondition, the reference voltage (Vref) is increased by a delta voltagegiven by the following

$\begin{matrix}{{\Delta\;{Vref}} = {{Vtrim}\left( \frac{R\; 2}{{R\; 1} + {R\; 2}} \right)}} & (4)\end{matrix}$

The transition from the output voltage (Vout) to the new voltage(Vout_trim_up) occurs very fast because there is no need to charge theoutput capacitor (Co) and the trim capacitor (Ctrim).

Before applying a trim down control command (i.e. output voltagedecrease), the steady-state condition of the DC-DC converter should beas follows. Switch S1 is off and switch S2 is on while the trimcapacitor (Ctrim) is connected in series to the output capacitor (C0)and charged to the Vtrim voltage through the trim buffer. In this mode,the converter operates as a conventional DC-DC converter as in FIG. 25and its output voltage value can be calculated using Equation (2). Afterthe trim down control command is applied, switch S1 is turned on andswitch S2 is turned off, thereby disconnecting the trim capacitor(Ctrim) from the output capacitor (Co). The voltage on the outputcapacitor (Co) is Vout-Vtrim such that the output voltage (Vout)decreases very quickly (virtually instantaneously) to the new valuedefined as followsVout_trim_down=Vout−Vtrim  (5)

In order to keep the DC-DC converter feedback loop in the steady-statecondition, the reference voltage has to be decreased by a delta voltagegiven by

$\begin{matrix}{{\Delta\;{Vref}} = {{Vtrim}\left( \frac{R\; 2}{{R\; 1} + {R\; 2}} \right)}} & (6)\end{matrix}$

The transition from the output voltage (Vout) to the new voltage (i.e.Vout_trim_down) occurs very fast because there is no need to dischargethe output capacitor (Co).

The converter circuit proposed was simulated using the followingparameters using synchronous DC-DC buck topology: Co=Ctrim=22 μF; Lo=6.8μH; Fsw=1.15 MHz; Vout =1.2 V and Vtrim up=1.2 V for trimming up;Vout=2.4 V and Vtrim=1.4 V for trimming down; Iload=500 mA; Vin=3 V. Thesimulation results are presented in FIGS. 28, 29 and 30. FIG. 28 shows asimulated output voltage waveform for the synchronous DC-DC buckconverter. FIG. 29 shows a zoom in of the trimming up output waveformwhile FIG. 30 shows a zoom in of the trimming down waveform.

It is noted that the simulation results show a very fast (less than 0.1μSec) voltage transition during the output voltage rise and fall. Theseresults are compared to the theoretically calculated rise and fall timesof the conventional DC-DC buck converter by using the following equationbelow

$\begin{matrix}{{{trise}/{tfall}} = \sqrt{\frac{2\;{LC}}{{{Dm}\left( {1 - {Dm}} \right)}\left( {\frac{1}{{\Delta\; D}} + 0.5} \right)}}} & (7)\end{matrix}$

Where Dm=(D1+D2)/2 and ΔD=D2−D1. D1 is the initial steady-state dutycycle while D2 is the final steady-state duty cycle.

Using the same parameters for the simulation results described supra,where D1=0.4 and D2=0.8 for trimming up and D1=0.8 and D2=0.333 fortrimming down, we obtain the following calculated resultstrise=20.4 μSectfall=21.5 μSec

A high level block diagram of an example high-efficiency enveloptracking method and system utilizing the DC-DC converter with fastoutput voltage transitions described supra is shown in FIG. 31. Thesystem, generally referenced 780, comprises an envelope detector 782,analog to digital converter (ADC) 784, DC-DC converter 786 with fastoutput voltage transitions as described supra, programmable delay 788and RF power amplifier (buffer) 789. Note that power buffer is optionalas the DC-DC converter output voltage can be connected directly to thePA supply voltage.

In operation, the RF envelope signal (envelope input) output of theenvelope detector 782 is applied to the A/D converter and to the PApower buffer (through the delay 788) simultaneously. The A/D converterfunctions to quantize the analog RF envelop signal into a digital signalwhich is then applied as a digital trim control bus to the DC-DCconverter with fast output voltage transitions. In one embodiment, aproperty of the trim control bus is that only one bit is high (i.e.logic “1”) at a time while the other bits are at a low value (i.e. logic“0”). The contents of the digital trim control bus functions to changethe DC-DC converter output voltage (DC-DC Vout). This output voltagetracks the RF envelop signal and provides a variable supply voltage tothe PA power amplifier (buffer). The DC-DC Vout and RF envelope signalvary together, greatly increasing the PA power buffer efficiency andoverall efficiency of the system. The programmable delay functions tocompensate for the delay between the envelope detector and the RF signalpath.

In an alternative embodiment, the envelope signal along with phaseinformation in digital form may be provided by another sub-system orcomponent such as the baseband sub-system. In this case, the A/Dconverter block is not necessary and the digital envelope signal can beused by the trim control circuit without the A/D converter therebyreducing the components and cost.

The DC-DC converter comprises the DC-DC converter shown in FIG. 27 anddescribed supra. In order to configure the DC-DC converter with fastoutput voltage transitions appropriately for the RF envelope trackingsystem of the present invention, the converter is realized as a DC-DCconverter having many discrete output voltages. To achieve this, n trimcells are added where n is number of bits of the trim control commandbus. In addition, the trim control block generates n Vtrim voltageswhere n is number of bits of the trim control command bus as well as avariable Vref voltage.

A block diagram illustrating an example DC-DC converter of the presentinvention incorporating multiple trim cells is shown in FIG. 32. Theconverter, generally referenced 790, comprises a voltage source Vin,switches 792, 794, output inductor Lo, output capacitor Co, switchdriver 793, trim circuit 796, resistors R1, R2, error amplifier 806 andPWM generator 808. The trim circuit 796 comprises a plurality of trimcells 798, switch S1, trim control block 802 and NOR gate 804. Each trimcell 798 comprises a trim buffer 800, trim capacitor Ctrim and switchS2.

When all trim control bus signals have a “0” value, the output of gate804 turns switch S1 on and all S2 switches in the n trim cells are off.Each Ctrim capacitor in each trim cell is charged to the proper Vtrimthrough its respective trim buffer. In this mode, the converter operatesas a conventional DC-DC converter and its output voltage value can becalculated using Equation (8) below. The output capacitor (Co) ischarged to the initial output voltage (Vout_init).

$\begin{matrix}{{Vout\_ init} = {{Vref}\left( {1 + \frac{R\; 1}{R\; 2}} \right)}} & (8)\end{matrix}$

If, for example, the ‘0’ bit of the trim control bus goes high (i.e. a“1” value), the switch S1 is turned off and the switch S2 is turned onthereby connecting the trim capacitor (Ctrim) of trim cell ‘0’ in serieswith the output capacitor (Co). The voltage on these two capacitors isdefined as Vout_init+Vtrim<0> such that the output voltage (Vout)increases very quickly (virtually instantaneously) to the new valuegiven byVout_trim<0>=Vout_init+Vtrim<0>  (9)In order to keep the DC-DC converter feedback loop in the steady-statecondition, the reference voltage (Vref) is increased by a delta voltagewhich is determined using the following

$\begin{matrix}{{\Delta\;{Vref}} = {{Vtrim}\left\langle 1 \right\rangle\left( \frac{R\; 2}{{R\; 1} + {R\; 2}} \right)}} & (10)\end{matrix}$

The transition from the output voltage (Vout_init) to the new voltage(i.e. Vout_trim<1>) occurs very fast because there is no need to chargethe output capacitor (Co) and the trim capacitor (Ctrim) in trim cell‘1’.

It can be seen that the output voltage of the DC-DC converter can bechanged by varying the digital value of the trim control bus as followsVout=Vout_init+Σ_(i=0) ^(n) a _(i) Vtrim_(i)  (11)where a_(i) is a digital value of the i^(th) bit of the n bit trimcontrol bus.

It is noted that an advantage of the envelop tracking method and systemof the present invention is that the DC-DC converter is able to trackthe input envelope signal with relatively high bandwidth using a lowswitching frequency for the converter, therefore maintaining its highefficiency.

It is further noted that the linearity of a perfect linear PA withsufficient power supply rejection will be minimally affected duringtransitions of its supply voltage. Thus, in most cases there is no needfor a smoothing circuit.

In reality, however, the linearity of the PA is affected due to rapidtransitions in its supply voltage especially in cases where low EVM(i.e. high linearity) is required. Thus, a smoothing circuit block ispreferably used, e.g. a power buffer, in the circuit. This power bufferis necessary if we consider a nonlinear PA (such as in an EnvelopeElimination and Restoration or Polar transmitter based system) in whichall the amplitude information is on the PA supply. This “power buffer”may comprise a buffer with gain=1 where its input is the envelop signaland its supply is the stepped, unsmoothed output from the DC-DCconverter. Its smoothed output voltage is used for the PA supply.

The tracking circuit of the present invention was simulated using thefollowing parameters in a DC-DC buck converter topology: flash type A/Dconverter; trim control bus=7 bits; Co=Ctrim<0:6>=22 μF; Lo=6.8 μH;Fsw=1.15 MHz; Vout_init=0.8 V; Vin=3 V; Vtrim<0>=150 mV; Vtrim<1>=300mV; Vtrim<2>=450 mV; Vtrim<3>=600 mV; Vtrim<4>=750 mV; Vtrim<5>=900 mV;Vtrim<6>=1050 mV; RF envelop input comprised a sinusoidal waveform witha frequency of 10 MHz.

A diagram illustrating the output voltage of the DC-DC converter circuitfor an RF input is shown in FIG. 33 where trace 810 represents the PApower buffer supply voltage and trace 812 represents the PA power bufferoutput voltage. A diagram illustrating the output voltage of the DC-DCconverter circuit for an RF input in more detail is shown in FIG. 34where trace 814 represents the PA power buffer supply voltage and trace816 represents the PA power buffer output voltage. The simulation graphsof FIGS. 33 and 34 show very good tracking of the RF envelope signal bythe DC-DC converter output voltage.

A schematic diagram illustrating a first example TX/RX switch is shownin FIG. 35. The switch circuit, generally referenced 480, comprises a TXinput port coupled to resistor R 482, inductor L 484 coupled to an RXoutput port, an antenna port, capacitor C 486, transistor Q 488, lowpass filters 490 and control logic circuit 498. Each low pass filtercomprises resistors 492, 496 and capacitor 494 coupled to ground andconnected in a ‘T’ configuration.

In operation, the TX/RX switch is placed in receive mode by turningtransistor Q off. In this mode, the signal path is from the antennathrough inductor L to the LNA circuit. In one embodiment, the inductormay comprise an inductance of 1.4 nH. Alternatively, the inductor may beimplemented as a bond wire having a suitable thickness (e.g., 0.7 mil)and length connected to a dummy pad.

To place the TX/RX switch into the transmit mode, transistor Q is turnedon. In this mode, the combination of capacitor C and inductor L form aparallel resonant circuit and thus present a high impedance to theoutput of the transmitter while exhibiting a low insertion loss of lessthan 0.5 dB. The power from the transmitter is transferred to theantenna via resister R.

In one embodiment, the switch is implemented using standard CMOStechnology. In another embodiment, a PIN diode is used to implement theswitch along with the appropriate peripheral components that are usedfor biasing and matching networks. In an alternative embodiment, galliumarsenide (GaAs) based switches are used to implement the RF switch. GaAsbased switches provide good linearity and isolation with low onresistance and off capacitance. Disadvantages of GaAs, however, include(1) the requirement of negative gate voltage to turn off due to theirN-channel depletion mode configuration; (2) driving GaAs switchestypically requires additional interface components; and (3) thedifficulty of integrating other functions such as logic control andmemory on the same chip.

In one embodiment, the RF switch is implemented entirely in CMOS andexhibits, high power, low current and high isolation while enablingintegration with logic control circuitry and other digital circuitrybased functions. Such an RF switch may be incorporated into a wirelessdevice such as a mobile phone, cordless phone, etc. described in moredetail infra.

Consider a wireless device such as a cordless phone including a base andone or more handsets. The handset usually comprises a single antennawith the recent trend of manufacturers implementing antenna diversity inthe handset. Due to relatively small physical dimensions of thehand-set, regular space diversity is not practical. Thus, cordless phonemanufacturers implement polarization diversity in hand-sets where one ofthe antennas is vertically polarized while a second antenna ishorizontally polarized. This can improve the performance of the link upto 6 dB, on top of approximately 10 dB statistical improvement ofdiversity antenna in the base. The integrated CMOS DPDT switch of thepresent invention has additional advantages in the case of antennadiversity in hand-sets (HS) including requiring less PCB area which iscritical in HS design; easy integration; and low BOM. The base stationmay comprise one or two antennas placed at a spatial angle to eachother. At each point in time, space diversity is achieved, e.g., anantenna for which the direct wave and the reflected wave createconstructive interference rather than destructive interference.

The logic control circuit 498 functions to generate the biasing voltagesfor the drain, source and gate terminals of transistor Q. The biasingsignals are applied through the low pass filter networks 490 to thedrain, source and gate of the transistor Q. The function of the LPFcircuits 490 is to suppress the RF leakage from the drain, source andgate to the logic control circuit 498. Note that other RC type filternetworks can be used without departing from the scope of the inventionas is known in the art. Note also that the use of the RC filter networksavoids the needs for RF chokes which is desirable when implementing theswitch in CMOS circuitry. Alternatively, RF chokes may be used eitherexternal to the chip or integrated therein.

In one embodiment, for the switch to operate at relatively high TX powerlevels (e.g., >25 dBm) and high VSWR, a deep N-well CMOS process is usedto construct the N-channel FET 488.

In one embodiment, to turn the transistor Q on, a relatively highvoltage (e.g., 3.6V) is applied to the gate while the drain and sourceterminals are connected to ground. Thus, V_(GS) is 3.6V forward biasingthe transistor. To turn the transistor Q off, a high voltage (e.g.,3.6V) is applied to the drain and source while the gate is connected toground. Thus, V_(GS) is −3.6V reverse biasing the transistor. It isnoted that reverse biasing the transistor to be turned off rather thanconnecting the gate, drain and source to ground (or controlling the gateterminal only and keeping drain and source biasing constant) enables theRF switch to achieve significantly higher isolation on the order ofapproximately 17 dB.

The low pass filter networks 490 on the source, drain and gate terminalsalso function to provide termination so that the antenna has constantimpedance relative to ground. The primary purpose of the LPF is tosuppress the RF leakage from the drain, gate and source to the logiccontrol circuit, thus preventing RF signal loss in the logic controlcircuit. This is achieved by configuring the switch circuit such thatthe impedance of the NMOS transistor is determined only by the physicalparameters of the NMOS transistor itself (e.g., R_(DS-ON), C_(DS-OFF),C_(G), C_(D), C_(S)) and is independent of the logic control circuit.

It is appreciated that the logic control circuit is exemplary only andother components can be used for enabling the transistor Q to functionsuch that each is turned on and off with the correct timing andsynchronization in accordance with the particular application. Thetransistor Q and all related components can be placed on-chip, thusreducing cost.

It will also be appreciated that the RC network for the low pass filtersand other components associated with the transistor Q are an example andthat other circuits that perform similar functions may be used as isknown in the electrical arts.

The logic control circuit controls the gate, drain and source of thetransistor Q. The configuration and use of CMOS technology provide forlow current consumption on the order of microamperes, as well as highisolation and flexibility as compared to prior art switches.

Note that the disclosed RF switch can also be used in environments inwhich one or more antennas are available, such as in handsets with orwithout antenna diversity, and with and without MIMO capability. The RFswitch is not limited for use to any type of device and can be used forany environment in which multiple switches are required, such aswireless local area network access points (WLAN AP), cellular phones,cordless phones, communication systems, radar systems or the like.

In an alternative embodiment, the RF switch configuration can beexpanded to include additional transistors and control circuits forswitching between additional ports, e.g., additional antenna, TX and RXports. A switch matrix can be used, such as an N×M matrix of elements,wherein each element is implemented as a single NMOS transistor, an Lseries shunt combination, or a T or PI combination. Any of thesecombinations can be implemented as a complementary switch, comprisingNMOS and PMOS. It will be appreciated that various modifications andvariations can be designed. For example, different peripheral componentsand control circuits can be used.

As described supra, the SPDT switch comprises three external terminals(i.e. pins or ports): Antenna, TX and RX. In one embodiment, for each ofthe terminals (pins) there are one or more parallel and/or series bondwires that connect the external pins to the internal on die SPDTterminals (i.e. bonding pads). In one embodiment, the bond wires measurea nominal 0.7 mil in diameter and made of copper or gold. The bond wiresfunction not only connect the internal circuitry on the semiconductordie to the external pins of the device package but also function tuneout or offset the capacitance of the transistors. The one or more bondwires per pin exhibit a relatively high Q factor which contributes to alower insertion loss for the connection. The particular die position andthe number of parallel bond wires used is adapted so as to tune out theNMOS switch input capacitance, thus simplifying the external matchingnetwork and achieving a lower insertion loss for the switch. This isdescribed in more detail infra.

In particular, the one or more bond wires coupling the external TX pinto the semiconductor die is operative to tune out the capacitance of thedrain of NMOS transistor Q. The one or more bond wires coupling theexternal antenna pin to the semiconductor die is operative to tune outthe capacitance of the source of NMOS transistor Q. The one or more bondwires coupling the external RX pin to the semiconductor die is operativeto tune out the capacitance of the drains of NMOS transistor Q. Thecombination of the bonding wire and external PCB based shunt capacitorform a matching network disposed between the TX, RX and antenna and theswitching transistor Q.

At each junction the circuit sees either twice the drain capacitance ortwice the source capacitance. Due to the relatively large area of theNMOS devices (e.g., on the order of 1 mm wide), this capacitance is onthe order of 0.5 to 1.5 pF. In order to tune out this capacitance asseen at the input ports, the inductance presented by the bond wire (oneor more in parallel and/or series) in combination with the PCB coppertraces is adapted to resonate and form a tuned circuit in the range ofdesired frequencies. The off-chip external parallel shunt capacitor onthe PCB functions, in combination with the inductance of the bond wiresto present a matching 50 Ohms impedance to the TX, RX and antenna ports.Note that the bond wires are typically part of a package (e.g., quad,flat, no leads or QFN) having a diameter of 0.7 to 1 mils andconstructed from gold, copper or aluminum.

A schematic diagram illustrating a second example TX/RX switch is shownin FIG. 36. The switch includes integrated TX and RX baluns and a commonTX/RX single ended antenna port. A combination of a high pass filter anda shunt NMOS switch Q1 enable relatively high TX/RX isolation and lowchip area. The switch, generally referenced 820, comprises transmitportion for coupling a differential input from a power amplifier to anantenna and a receive portion for coupling a signal received on theantenna to a differential output to a low noise amplifier (LNA) circuit.The transmit portion comprises capacitors 851, 853, 873, 878, 892, 894,inductors 880, 882, 874, 876, TX balun 828 including transformerwindings 868, 870, 872, transistors 884, 886, 888, 890 and resistors891, 893, 896, 898. The receive portion comprises capacitors C1, 836,838, 842, 848, 854, 856, 850, 852, inductors 862, 864, 844, 846, RXbalun 826 including transformer windings 830, 832, 834, transistors Q1,866, 860, 840, 858 and resistors 822, 824, 823.

Operation of the switch includes applying appropriate control signals tothe RX control input and the TX control inputs. To place the TX/RXswitch in receive mode, the RX control is configured to turn Q1 off andthe TX control is configured to turn transistors 886, 888 off. TurningQ1 off permits the receive signal from the antenna to pass through theRX balun 826 to differential transistor pair 866, 860. The differentialsignal generated is output to the LNA circuit (134 in FIG. 2 forexample).

To place the TX/RX switch in transmit mode, the RX control is configuredto turn Q1 on and the TX control is configured to turn transistors 886,888 on. Turning Q1 on blocks the transmit signal from entering thereceive circuit path. The differential signal input from the poweramplifier is input to transistors 886, 888 and subsequently applied tothe TX balun 828 whose output is input to the antenna port.

A schematic diagram illustrating an example antenna RF switch is shownin FIG. 37. The antenna switch, generally referenced 900, comprises twoantenna ports for coupling an antenna port to antenna 1 902 and antenna2 948 to achieve antenna diversity. In single antenna applications, oneof the NMOS switches is disabled thus achieving lower insertion loss.The switch comprises capacitors 904, 906, 908, 924, 926, 944, 946, 940,942, 949, matching network 922 including capacitors 923, 925 andtransformer 927, low pass filters 912, 918, 932, 936, inductors 910,946, transistors 914, 931, control logic blocks 920, 938 and resistors916, 928, 930, 934.

In operation, the control logic blocks configure transistor switches914, 931 to couple the antenna port to either antenna 1 or antenna 2 atany one time. To couple antenna 1 to the antenna port, the control logicblock 920, via an antenna 1 control signal, turns transistor 914 on andthe control logic block 938, via an antenna 2 control signal, turnstransistor 931 off. To couple antenna 2 to the antenna port, the controllogic block 920, via an antenna 1 control signal, turns transistor 914off and the control logic block 938, via an antenna 2 control signal,turns transistor 931 on. The low pass filters 912, 918, 932, 936 andcontrol logic blocks 920, 932 operate similarly to the low pass filters490 and control logic block 494 of the TX/RX switch of FIG. 35.

A graph illustrating the power added efficiency (PAE) as a function ofoutput power is shown in FIG. 38. Trace 520 represents the PAE versusoutput power for a traditional power amplifier operating at variouscoarse and fine working backoff points. Trace 522 represents the PAEversus output power for the power amplifier and FEM circuit of thepresent invention effectively exhibiting multiple backoff points byemploying the high/low sub-amplifier technique in combination with asynchronous DC-DC converter and trim cell based envelope trackingsystem.

A graph illustrating the output power as a function of input power isshown in FIG. 39. Trace 524 represents output power versus input powerwith multiple DC2DC working regions, coarse and fine working pointsselected in accordance with average input power via the envelopetracking system described supra.

A graph illustrating the AM2AM and AM2PM response of the power amplifiercircuit is shown in FIG. 40.

A graph illustrating the RF signal before and after power amplifierbackoff dynamic backoff working regions is shown in FIG. 42. Trace 540represents the example RF signal at the input to the power amplifier ofthe present invention. Trace 542 represents the RF signal after thepower amplifier. Trace 544 represents the dynamic backoff regionsemployed in an example embodiment.

A graph illustrating the spectrum of the power amplifier for QAM64 isshown in FIG. 43. The dashed trace represents the transmit signal beforethe power amplifier while the solid trace represents the receivedsignal. A graph illustrating the time domain RF OFDM signal before andafter dynamic backoff for QAM64 is shown in FIG. 44. The thin solid linerepresents the signal before the power amplifier while the bold solidline represents the signal after the dynamic backoff power amplifier.The bolded double line represents the first backoff threshold TH1 whilethe thin double line represents the second backoff threshold TH2. Agraph illustrating the receive and transmit constellation for QAM64 isshown in FIG. 45. The thin dots represent the transmitted data beforethe power amplifier while the bold dots represent the received data.

A graph illustrating the spectrum of the power amplifier for QAM256 isshown in FIG. 46. The dashed trace represents the transmit signal beforethe power amplifier while the solid trace represents the receivedsignal. A graph illustrating the time domain RF OFDM signal before andafter dynamic backoff for QAM256 is shown in FIG. 47. The thin solidline represents the signal before the power amplifier while the boldsolid line represents the signal after the dynamic backoff poweramplifier. The bolded double line represents the first backoff thresholdTH1 while the thin double line represents the second backoff thresholdTH2. A graph illustrating the receive and transmit constellation forQAM256 is shown in FIG. 48. The thin dots represent the transmitted databefore the power amplifier while the bold dots represent the receiveddata.

A high level block diagram illustrating an example wireless deviceincorporating the FEM circuit of the present invention is shown in FIG.49. The tablet/mobile device is preferably a two-way communicationdevice having voice and/or data communication capabilities. In addition,the device optionally has the capability to communicate with othercomputer systems via the Internet. Note that the device may comprise anysuitable wired or wireless device such as multimedia player, mobilecommunication device, cellular phone, cordless phone, smartphone, PDA,PNA, Bluetooth device, tablet computing device such as the iPad, Galaxy,etc. For illustration purposes only, the device is shown as a mobiledevice, such as a cellular based telephone, cordless phone, smartphoneor superphone. Note that this example is not intended to limit the scopeof the mechanism as the invention can be implemented in a wide varietyof communication devices. It is further appreciated the mobile deviceshown is intentionally simplified to illustrate only certain components,as the mobile device may comprise other components and subsystems beyondthose shown.

The mobile device, generally referenced 60, comprises one or moreprocessors 62 which may comprise a baseband processor, CPU,microprocessor, DSP, etc., optionally having both analog and digitalportions. The mobile device may comprise a plurality of radios 102(e.g., cellular, cordless phone, etc.), FEM circuit 103 with poweramplifier 105 constructed in accordance with the present invention andassociated one or more antennae 104. Radios for the wireless link andany number of other wireless standards and Radio Access Technologies(RATs) may be included. Examples include, but are not limited to,Digital Enhanced Cordless Telecommunications (DECT), Code DivisionMultiple Access (CDMA), Personal Communication Services (PCS), GlobalSystem for Mobile Communication (GSM)/GPRS/EDGE 3G; WCDMA; WiMAX forproviding WiMAX wireless connectivity when within the range of a WiMAXwireless network; Bluetooth for providing Bluetooth wirelessconnectivity when within the range of a Bluetooth wireless network;802.11 WLAN for providing wireless connectivity when in a hot spot orwithin the range of an ad hoc, infrastructure or mesh based wireless LAN(WLAN) network; near field communications; UWB; GPS receiver forreceiving GPS radio signals transmitted from one or more orbiting GPSsatellites, FM transceiver provides the user the ability to listen to FMbroadcasts as well as the ability to transmit audio over an unused FMstation at low power, such as for playback over a car or home stereosystem having an FM receiver, digital broadcast television, etc.

The mobile device may also comprise internal volatile storage 64 (e.g.,RAM) and persistent storage 68 (e.g., ROM) and flash memory 66.Persistent storage 68 also stores applications executable byprocessor(s) 62 including the related data files used by thoseapplications to allow device 60 to perform its intended functions.Several optional user-interface devices include trackball/thumbwheelwhich may comprise a depressible thumbwheel/trackball that is used fornavigation, selection of menu choices and confirmation of action,keypad/keyboard such as arranged in QWERTY fashion for enteringalphanumeric data and a numeric keypad for entering dialing digits andfor other controls and inputs (the keyboard may also contain symbol,function and command keys such as a phone send/end key, a menu key andan escape key), headset 88, earpiece 86 and/or speaker 84, microphone(s)and associated audio codec or other multimedia codecs, vibrator foralerting a user, one or more cameras and related circuitry 110, 112,display(s) 122 and associated display controller 106 and touchscreencontrol 108. Serial ports include a micro USB port 76 and related USBPHY 74 and micro SD port 78. Other interface connections may includeSPI, SDIO, PCI, USD, etc. for providing a serial link to a user's PC orother device. SIM/RUIM card 80 provides the interface to a user's SIM orRUIM card for storing user data such as address book entries, useridentification, etc.

Portable power is provided by the battery 72 coupled to power managementcircuitry 70. External power is provided via USB power or an AC/DCadapter connected to the power management circuitry which is operativeto manage the charging and discharging of the battery. In addition to abattery and AC/DC external power source, additional optional powersources each with its own power limitations, include: a speaker phone,DC/DC power source, and any bus powered power source (e.g., USB devicein bus powered mode).

Operating system software executed by the processor 62 is preferablystored in persistent storage (i.e. ROM 68), or flash memory 66, but maybe stored in other types of memory devices. In addition, systemsoftware, specific device applications, or parts thereof, may betemporarily loaded into volatile storage 64, such as random accessmemory (RAM). Communications signals received by the mobile device mayalso be stored in the RAM.

The processor 62, in addition to its operating system functions, enablesexecution of software applications on the device 60. A predetermined setof applications that control basic device operations, such as data andvoice communications, may be installed during manufacture. Additionalapplications (or apps) may be downloaded from the Internet and installedin memory for execution on the processor. Alternatively, software may bedownloaded via any other suitable protocol, such as SDIO, USB, networkserver, etc.

Other components of the mobile device include an accelerometer 114 fordetecting motion and orientation of the device, magnetometer 116 fordetecting the earth's magnetic field, FM radio 118 and antenna 120,Bluetooth radio 98 and antenna 100, 802.11 (including standards ‘a’,‘b’, ‘g’, ‘n’, ‘ac’ for example) based Wi-Fi radio 94 (including FEMcircuit 95 with power amplifier 97 constructed in accordance with thepresent invention and one or more antennae 96) and GPS 90 and antenna92.

In accordance with the invention, the mobile device 60 is adapted toimplement the electronic catalog system as hardware, software or as acombination of hardware and software. In one embodiment, implemented asa software task, the program code operative to implement the electroniccatalog system is executed as one or more tasks running on processor 62and either (1) stored in one or more memories 64, 66, 68 or (2) storedin local memory within the processor 62 itself.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the present invention has been presented for purposes ofillustration and description, but is not intended to be exhaustive orlimited to the invention in the form disclosed. As numerousmodifications and changes will readily occur to those skilled in theart, it is intended that the invention not be limited to the limitednumber of embodiments described herein. Accordingly, it will beappreciated that all suitable variations, modifications and equivalentsmay be resorted to, falling within the spirit and scope of the presentinvention. The embodiments were chosen and described in order to bestexplain the principles of the invention and the practical application,and to enable others of ordinary skill in the art to understand theinvention for various embodiments with various modifications as aresuited to the particular use contemplated.

What is claimed is:
 1. A transmit/receive switch, comprising: a transmit(TX) port that belongs to a chip, wherein the TX port is for coupling toa radio frequency (RF) transmit signal provided from a power amplifierof the chip; a receive (RX) port that belongs to the chip, wherein theRX port is for outputting to a low noise amplifier of the chip an RFreceive signal ; an antenna port that belongs to the chip for couplingto an antenna that is external to the chip; an inductance that iscoupled in series with said antenna port and said RX port; wherein theinductance comprises a wire bond that is connected to a dummy pad of thechip; wherein the wire bond has a wire bond inductance that is utilizedby the transmit/receive switch when operating in a transmit mode andwhen operating in a receive mode; and a series combination ofcapacitance and a field effect transistor (FET) switch coupled inparallel across said inductance, wherein said FET switch having source,drain and gate terminals, the gate terminal operative to receive acontrol signal for controlling said FET switch.
 2. The transmit/receiveswitch according to claim 1, wherein said switch is rendered conductivein the transmit mode thereby establishing a high impedance parallelresonant circuit of said inductance and said capacitance.
 3. Thetransmit/receive switch according to claim 1, wherein the RF transmitsignal is blocked from said RX port by operation of a high impedanceparallel resonant circuit of said inductance and said capacitance whensaid switch is rendered conductive in the transmit mode.
 4. Thetransmit/receive switch according to claim 1, wherein said switch isrendered nonconductive in the receive mode thereby coupling said antennaport and said receive port through said inductance.
 5. Thetransmit/receive switch according to claim 1, further comprising aresistance in series between said transmit port and said antenna port.6. The transmit/receive switch according to claim 1, wherein said FETswitch is fabricated using a semiconductor technology selected from thegroup consisting of complementary metal oxide semiconductor (CMOS),Gallium Arsenide (GaAs), Silicon Germanium (SiGe) and Gallium Nitride(GaN).
 7. The transmit/receive switch according to claim 1, wherein saidtransmit/receive switch is adapted to transmit and receive signalsconforming to a wireless standard selected from the group consisting of802.11 WLAN, LTE, WiMAX, HDTV, 3G cellular, 4G cellular and DECT.
 8. Atransmit/receive switch, comprising: a transmit (TX) port for couplingto a radio frequency (RF) transmit signal; a receive (RX) port forcoupling to an RF receive signal; an antenna port for coupling to anantenna; a first transformer balun operative to couple the RF receivesignal from said antenna port to said RX port; a capacitance in serieswith said first transformer balun; a field effect transistor (FET)switch coupled in parallel across a primary winding of said firsttransformer balun; and a second transformer balun operative to couplethe RF transmit signal from said TX port to said antenna port.
 9. Thetransmit/receive switch according to claim 8, wherein said FET switch isrendered conductive in a transmit mode thereby grounding the input to alow noise amplifier (LNA) coupled to said RX port.
 10. Thetransmit/receive switch according to claim 8, wherein said FET switch isrendered conductive in a transmit mode thereby transferring said RFtransmit signal from said TX port to said antenna port while blockingthe RF transmit signal from said entering said RX port.
 11. Thetransmit/receive switch according to claim 8, wherein said FET switch isrendered conductive in a transmit mode whereby the combined impedance ofsaid capacitance, said FET switch in a conductive state and thereflected impedance of a low noise amplifier (LNA) coupled to said RXport presents a relatively high impedance to said RF transmit signal.12. The transmit/receive switch according to claim 8, further comprisinga matching network coupled between said TX port and a power amplifiercircuit.
 13. The transmit/receive switch according to claim 8, furthercomprising a matching network coupled between said RX port and a lownoise amplifier.
 14. The transmit/receive switch according to claim 8,wherein said FET switch is rendered nonconductive in a receive modethereby coupling said antenna port and said receive port through saidfirst transformer balun.
 15. The transmit/receive switch according toclaim 8, further comprising a tuned tank circuit coupled to said firsttransformer balun for impedance matching to a low noise amplifier (LNA)coupled to said RX port.
 16. The transmit/receive switch according toclaim 8, wherein said transmit/receive switch is fabricated using asemiconductor technology selected from the group consisting ofcomplementary metal oxide semiconductor (CMOS), Gallium Arsenide (GaAs),Silicon Germanium (SiGe) and Gallium Nitride (GaN).
 17. Thetransmit/receive switch according to claim 8, wherein saidtransmit/receive switch is adapted to transmit and receive signalsconforming to a wireless standard selected from the group consisting of802.11 WLAN, LTE, WiMAX, HDTV, 3G cellular, 4G cellular and DECT.
 18. Atransmit/receive switch, comprising: a transmit (TX) port that belongsto a chip, wherein the TX port is for coupling to a radio frequency (RF)transmit signal provided from a power amplifier of the chip; a receive(RX) port that belongs to the chip, wherein the RX port is foroutputting to a low noise amplifier of the chip an RF receive signal; anantenna port that belongs to the chip for coupling to an antenna that isexternal to the chip; an inductance that is coupled in series with saidantenna port and said RX port; wherein the inductance comprises a wirebond that is connected to a dummy pad of the chip; wherein the wire bondhas a wire bond inductance that is forms with the capacitance a parallelresonant circuit when the transmit/receive switch operates in a transmitmode; and a series combination of capacitance and a field effecttransistor (FET) switch coupled in parallel across said inductance,wherein said FET switch having source, drain and gate terminals, thegate terminal operative to receive a control signal for controlling saidFET switch.